%0 Journal Article
%@ 1876-6102
%A Berardone, Irene
%A Corrado, Mauro
%A Paggi, Marco
%D 2014
%F eprints:2287
%I Elsevier
%J Energy Procedia
%P 22-29
%T A generalized electric model for mono and polycrystalline silicon in the presence of cracks and random defects
%U http://eprints.imtlucca.it/2287/
%V 55
%X Damage, micro-cracks, grain boundaries and other defects in solar cells are impacting on the electric power-loss of photovoltaic modules, their actual solar conversion efficiency and also their lifetime. In the present contribution, a one-dimensional model for simulating the electric current distribution in solar cells accounting for a distributed series resistance is generalized to the presence of partially conductive cracks. The proposed model is used to perform a quantitative analysis of electroluminescence (EL) images of cracked monocrystalline silicon solar cells. A further generalization in a stochastic direction is also proposed in order to take into account randomly distributed defects typical of polycrystalline silicon.