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A generalized electric model for mono and polycrystalline silicon in the presence of cracks and random defects

Berardone, Irene and Corrado, Mauro and Paggi, Marco A generalized electric model for mono and polycrystalline silicon in the presence of cracks and random defects. Energy Procedia, 55. pp. 22-29. ISSN 1876-6102 (2014)

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Abstract

Damage, micro-cracks, grain boundaries and other defects in solar cells are impacting on the electric power-loss of photovoltaic modules, their actual solar conversion efficiency and also their lifetime. In the present contribution, a one-dimensional model for simulating the electric current distribution in solar cells accounting for a distributed series resistance is generalized to the presence of partially conductive cracks. The proposed model is used to perform a quantitative analysis of electroluminescence (EL) images of cracked monocrystalline silicon solar cells. A further generalization in a stochastic direction is also proposed in order to take into account randomly distributed defects typical of polycrystalline silicon.

Item Type: Article
Identification Number: https://doi.org/10.1016/j.egypro.2014.08.005
Projects: ERC StG CA2PVM (GA no. 306622), FIRB RBFR107AKG
Funders: European Research Council, Italian Ministry of Education, University and Research
Subjects: Q Science > Q Science (General)
Research Area: Computer Science and Applications
Depositing User: Prof Marco Paggi
Date Deposited: 02 Oct 2014 08:53
Last Modified: 02 Oct 2014 08:53
URI: http://eprints.imtlucca.it/id/eprint/2287

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