Items where Author is "Xu, Y."
Number of items: 10. BlVail, John M and Schindel, Daniel and Yang, A. and Penner, Orion and Pandey, Ravi and Jiang, Huitian and Blanco, Miguel Álvarez and Costales, Aurora and Qiu, Qing Chun and Xu, Y. Effect of dielectric polarization on the properties of charged point defects in insulating crystals: the nitrogen vacancy in AlN. Journal of Physics: Condensed Matter, 16 (20). pp. 3371-3378. ISSN 0953-8984 (2004) CoVail, John M and Schindel, Daniel and Yang, A. and Penner, Orion and Pandey, Ravi and Jiang, Huitian and Blanco, Miguel Álvarez and Costales, Aurora and Qiu, Qing Chun and Xu, Y. Effect of dielectric polarization on the properties of charged point defects in insulating crystals: the nitrogen vacancy in AlN. Journal of Physics: Condensed Matter, 16 (20). pp. 3371-3378. ISSN 0953-8984 (2004) JiVail, John M and Schindel, Daniel and Yang, A. and Penner, Orion and Pandey, Ravi and Jiang, Huitian and Blanco, Miguel Álvarez and Costales, Aurora and Qiu, Qing Chun and Xu, Y. Effect of dielectric polarization on the properties of charged point defects in insulating crystals: the nitrogen vacancy in AlN. Journal of Physics: Condensed Matter, 16 (20). pp. 3371-3378. ISSN 0953-8984 (2004) PaVail, John M and Schindel, Daniel and Yang, A. and Penner, Orion and Pandey, Ravi and Jiang, Huitian and Blanco, Miguel Álvarez and Costales, Aurora and Qiu, Qing Chun and Xu, Y. Effect of dielectric polarization on the properties of charged point defects in insulating crystals: the nitrogen vacancy in AlN. Journal of Physics: Condensed Matter, 16 (20). pp. 3371-3378. ISSN 0953-8984 (2004) PeVail, John M and Schindel, Daniel and Yang, A. and Penner, Orion and Pandey, Ravi and Jiang, Huitian and Blanco, Miguel Álvarez and Costales, Aurora and Qiu, Qing Chun and Xu, Y. Effect of dielectric polarization on the properties of charged point defects in insulating crystals: the nitrogen vacancy in AlN. Journal of Physics: Condensed Matter, 16 (20). pp. 3371-3378. ISSN 0953-8984 (2004) QiVail, John M and Schindel, Daniel and Yang, A. and Penner, Orion and Pandey, Ravi and Jiang, Huitian and Blanco, Miguel Álvarez and Costales, Aurora and Qiu, Qing Chun and Xu, Y. Effect of dielectric polarization on the properties of charged point defects in insulating crystals: the nitrogen vacancy in AlN. Journal of Physics: Condensed Matter, 16 (20). pp. 3371-3378. ISSN 0953-8984 (2004) ScVail, John M and Schindel, Daniel and Yang, A. and Penner, Orion and Pandey, Ravi and Jiang, Huitian and Blanco, Miguel Álvarez and Costales, Aurora and Qiu, Qing Chun and Xu, Y. Effect of dielectric polarization on the properties of charged point defects in insulating crystals: the nitrogen vacancy in AlN. Journal of Physics: Condensed Matter, 16 (20). pp. 3371-3378. ISSN 0953-8984 (2004) VaVail, John M and Schindel, Daniel and Yang, A. and Penner, Orion and Pandey, Ravi and Jiang, Huitian and Blanco, Miguel Álvarez and Costales, Aurora and Qiu, Qing Chun and Xu, Y. Effect of dielectric polarization on the properties of charged point defects in insulating crystals: the nitrogen vacancy in AlN. Journal of Physics: Condensed Matter, 16 (20). pp. 3371-3378. ISSN 0953-8984 (2004) XuVail, John M and Schindel, Daniel and Yang, A. and Penner, Orion and Pandey, Ravi and Jiang, Huitian and Blanco, Miguel Álvarez and Costales, Aurora and Qiu, Qing Chun and Xu, Y. Effect of dielectric polarization on the properties of charged point defects in insulating crystals: the nitrogen vacancy in AlN. Journal of Physics: Condensed Matter, 16 (20). pp. 3371-3378. ISSN 0953-8984 (2004) YaVail, John M and Schindel, Daniel and Yang, A. and Penner, Orion and Pandey, Ravi and Jiang, Huitian and Blanco, Miguel Álvarez and Costales, Aurora and Qiu, Qing Chun and Xu, Y. Effect of dielectric polarization on the properties of charged point defects in insulating crystals: the nitrogen vacancy in AlN. Journal of Physics: Condensed Matter, 16 (20). pp. 3371-3378. ISSN 0953-8984 (2004) |
